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Magnetic field dependent variable range hopping behaviour in resistivity at low temperatures in polycrystalline colossal magnetoresistive manganites: evidence of spin polarised tunnelling

机译:磁场依赖于电阻率的可变范围跳跃行为   在多晶巨磁阻锰氧化物的低温下:   自旋极化隧道的证据

摘要

It has been observed that the low temperature magnetoresistance behaviour inpolycrystalline colossal magnetoresistive (CMR) manganites differ significantlyfrom the single crystals. The polycrystalline samples show largemagnetoresistance at temperatures much below the ferromagnetic transitiontemperature where the magnetoresistance of single crystals is very small. Thishas conventionally been attributed to spin polarised tunnelling at the grainboundaries in polycrystalline samples. In this paper we show the existence of avariable range hopping behaviour in resistivity at low temperatures inpolycrystalline CMR samples. This behaviour gets gradually suppressed under theapplication of magnetic field. We discuss the significance of these resultswith respect to spin polarised tunnelling.
机译:已经观察到,多晶巨磁致电阻(CMR)锰矿中的低温磁阻行为与单晶显着不同。多晶样品在远低于铁磁转变温度的温度下显示出大的磁阻,其中单晶的磁电阻非常小。通常,这归因于多晶样品中晶界处的自旋极化隧穿。在本文中,我们显示了多晶CMR样品在低温下的电阻率中存在可变范围跳变行为。在磁场的作用下,这种行为逐渐受到抑制。我们讨论了这些结果对自旋极化隧穿的意义。

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